advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 9m fast switching characteristic i d 41a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 5 /w rthj-a 62.5 /w data & specifications subject to change without not ice ap4034gh-hf 25 halogen-free product 120 parameter rating drain-source voltage 30 total power dissipation gate-source voltage + 20 drain current, v gs @ 10v 41 drain current, v gs @ 10v 26 pulsed drain current 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb m ount) 3 201501292 1 total power dissipation 3 2 storage temperature range operating junction temperature range -55 to 150 -55 to 150 g d s to-252(h) g d s ap4034 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial- industrial surface mount applications using infrared refl ow technique and suited for high current application due to the low connec tion resistance.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v v gs =10v, i d =24a - - 9 m v gs =4.5v, i d =20a - - 13.5 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =20a - 26 - s i dss drain-source leakage current v ds =24v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =20a - 16.5 26.4 nc q gs gate-source charge v ds =24v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =20a - 60 - ns t d(off) turn-off delay time r g =3.3 - 25 - ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 1620 2600 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 140 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =24a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 14 - ns q rr reverse recovery charge di/dt=100a/s - 5 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. ap4034gh-hf r ds(on) static drain-source on-resistance 2 2 3.surface mounted on 1 in 2 copper pad of fr4 board
ap4034gh-hf fig 1. typical output characteristics fig 2. typical output characteristics + 20 fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 20 40 60 80 100 120 0 2 4 6 8 10 12 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =24a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 6 7 8 9 10 11 12 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap4034gh-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics + 20 fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. drain current v.s. case temperature 4 0.1 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0 8 16 24 32 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =24v 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss operation in this area limited by r ds(on) 0 10 20 30 40 50 60 0 1 2 3 4 5 6 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c 0 10 20 30 40 50 60 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a)
marking information 5 ap4034gh-hf part number package code date code (ywwsss) y last digit of the year ww week sss sequence 4034gh ywwsss meet rohs requirement for low voltage mosfet only
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